NSN 5961-01-123-9067
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-123-9067 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N415E, 1675799, 167579-9, 1675799, 167579-9, 1675799, 167579-9, 1N415E, 1N415E, 5961-01-123-9067, 01-123-9067, 5961011239067, 011239067
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 19, 1981 | 01-123-9067 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-123-9067
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N415E | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| 167579-9 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 167579-9 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 167579-9 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N415E | 3BBY6 | SEMI-GENERAL, INC. |
| 1N415E | DG438 | SEMIC RF ELECTRONIC GMBH |
Technical Data | NSN 5961-01-123-9067
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INCLOSURE MATERIAL | CERAMIC AND METAL |
| MOUNTING METHOD | PRESS FIT |
| OVERALL LENGTH | 0.840 INCHES NOMINAL |
| OVERALL DIAMETER | 0.250 INCHES NOMINAL |