NSN 5961-01-128-0427

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-128-0427 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: D225011200, D22-5011-200, VJ248, 185300254, 1853-002-54, 5961-01-128-0427, 01-128-0427, 5961011280427, 011280427

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 11, 198201-128-042762108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-01-128-0427
Part Number Cage Code Manufacturer
D22-5011-20014304HARRIS CORPORATIONDBA HARRIS RF COMMUNICATION
VJ24827777L3 TECHNOLOGIES, INC.DBA INSIGHT TECHNOLOGY DIVISION
1853-002-54H6637NORAN INSTRUMENTS B.V.
Technical Data | NSN 5961-01-128-0427
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 WORKING PEAK REVERSE VOLTAGE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACF100.00 AMPERES AND ACE30.00 AMPERES
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-50.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH0.600 INCHES NOMINAL
OVERALL WIDTH0.600 INCHES NOMINAL
OVERALL HEIGHT0.200 INCHES NOMINAL