NSN 5961-01-128-8262
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-128-8262 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: UES704, 8037201, 803720-1, 5961-01-128-8262, 01-128-8262, 5961011288262, 011288262
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 26, 1982 | 01-128-8262 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-128-8262
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| UES704 | 12969 | MICRO USPD INC |
| 803720-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-128-8262
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CBE200.0 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS AND METAL |