NSN 5961-01-130-4367
Part Details | TRANSISTOR
5961-01-130-4367 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: VN30AB, 5961-01-130-4367, 01-130-4367, 5961011304367, 011304367
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 22, 1982 | 01-130-4367 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-130-4367
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| VN30AB | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-130-4367
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAW35.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD2.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG8.3 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.021 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES NOMINAL |
| OVERALL DIAMETER | 0.360 INCHES NOMINAL |
| SPECIAL FEATURES | T.O. 31W4-2TGC-26 |
| END ITEM IDENTIFICATION | AN/TGC-26 |