NSN 5961-01-132-0037
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-132-0037 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: BYV27.150, Q68000A4679F25, Q68000-A4679-F25, Q68000A4679F25, Q68000-A4679-F25, UES1102, UES1102, BYV27150, BYV27-150, BYV27150, BYV27-150, BYV27150, BYV27-150, 5961-01-132-0037, 01-132-0037, 5961011320037, 011320037
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 20, 1982 | 01-132-0037 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-132-0037
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| BYV27.150 | K0577 | BRITISH SAROZAL LTD |
| Q68000-A4679-F25 | C4751 | EPCOS AG |
| Q68000-A4679-F25 | D1180 | EPCOS AG ABT. PR ROE K PM |
| UES1102 | 12969 | MICRO USPD INC |
| UES1102 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| BYV27-150 | F6650 | PHILIPS COMPOSANTS SA DIVISIONSEMICONDUCTEURS |
| BYV27-150 | F0862 | PHILIPS FRANCE |
| BYV27-150 | F4022 | VISHAY GENERAL SEMICONDUCTOR SAS |
Technical Data | NSN 5961-01-132-0037
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CED100.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACCC2.50 AMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.700 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.085 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| END ITEM IDENTIFICATION | AN/FSQ-114 11982 |