NSN 5961-01-133-3489
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-133-3489 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: RELEASE 5203, 2631602864, 26316028-64, 1N5074, 1N5074, 2631602864, 26316028-64, 5961-01-133-3489, 01-133-3489, 5961011333489, 011333489
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 12, 1982 | 01-133-3489 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-133-3489
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| RELEASE 5203 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 26316028-64 | 99167 | HAMILTON SUNDSTRAND CORPORATION |
| 1N5074 | 14552 | MICROSEMI CORPORATION |
| 1N5074 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
| 26316028-64 | 55820 | UNITED TECHNOLOGIES CORPORATIONDBA PRATT & WHITNEY |
Technical Data | NSN 5961-01-133-3489
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET22.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACEB30.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF3.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.028 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.085 INCHES NOMINAL |
| OVERALL DIAMETER | 0.085 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELEASE5203 PROFESSIONAL/INDUSTRIAL ASSOCIATION STANDARD |