NSN 5961-01-147-8989

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-147-8989 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 8594620002, 85946200-02, 655628, 655-628, RPM508CDC, 10133323, SA7558, 5961-01-147-8989, 01-147-8989, 5961011478989, 011478989

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 24, 198301-147-898962108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 3 PHASE

Cross Reference | NSN 5961-01-147-8989
Part Number Cage Code Manufacturer
85946200-0227963GENERAL DYNAMICS INFORMATION SYSTEMSINC.
655-62812969MICRO USPD INC
RPM508CDC0EC70MICROSEMI CORPRPM MICRO DIV
10133323A486GNIMIKKEISTOKESKUS NCB FINLAND
SA755814099SEMTECH CORPORATION
Technical Data | NSN 5961-01-147-8989
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACG14.50 AMPERES
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY5 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 3 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH2.280 INCHES NOMINAL
OVERALL WIDTH0.770 INCHES NOMINAL
OVERALL HEIGHT0.820 INCHES NOMINAL