NSN 5961-01-150-1669

Part Details | TRANSISTOR

5961-01-150-1669 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5039, 2N5039, 2N5039, 2000904008, 20-00904-008, 2N5039, 2N5039, 2N5039, 5961-01-150-1669, 01-150-1669, 5961011501669, 011501669

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 31, 198301-150-166920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-150-1669
Part Number Cage Code Manufacturer
2N503934371INTERSIL CORPORATIONDIV NA
2N503912969MICRO USPD INC
2N503933178MICROSEMI PPC INC
20-00904-00800724RAYTHEON COMPANYDBA RAYTHEON
2N503907256SILICON TRANSISTOR CORPSUB OF BBF INC
2N503901295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
2N503901281TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES
Technical Data | NSN 5961-01-150-1669
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION NPN
VOLTAGE RATING IN VOLTS PER CHARACTERISTICA5.0 NOMINAL
CURRENT RATING PER CHARACTERISTICAACAC20.00 AMPERES NOMINAL AND BACBF50.00 MILLIAMPERES NOMINAL
POWER RATING PER CHARACTERISTICATCAG140.0 WATTS
TRANSFER RATIOBAK20.0 MINIMUM AND CAK100.0 MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN175.0 DEG CELSIUS
INCLOSURE MATERIAL METAL
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-3
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 PIN AND 1 CASE
OVERALL LENGTH1.573 INCHES MAXIMUM
OVERALL HEIGHT0.350 INCHES NOMINAL
OVERALL WIDTH1.050 INCHES MAXIMUM