NSN 5961-01-150-1671
Part Details | TRANSISTOR
5961-01-150-1671 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5302, 2N5302, 2N5302, 2000904017, 20-00904-017, 2N5302, 2N5302, 2N5302, 5961-01-150-1671, 01-150-1671, 5961011501671, 011501671
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 31, 1983 | 01-150-1671 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-150-1671
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5302 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 2N5302 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N5302 | 33178 | MICROSEMI PPC INC |
| 20-00904-017 | 00724 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N5302 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| 2N5302 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 2N5302 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-01-150-1671
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAC60.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACBE30.00 AMPERES NOMINAL AND BACBF1.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG200.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |