NSN 5961-01-152-2082
Part Details | TRANSISTOR
5961-01-152-2082 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: T0680320001, T068-032-0001, 2N5014, 2N5014, 5961-01-152-2082, 01-152-2082, 5961011522082, 011522082
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 28, 1983 | 01-152-2082 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-152-2082
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| T068-032-0001 | 07421 | INTERSTATE ELECTRONICS CORPORATIONDBA L-3 INTERSTATE ELECTRONICS |
| 2N5014 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
| 2N5014 | 30043 | SOLID STATE DEVICES, INC. |
Technical Data | NSN 5961-01-152-2082
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM900.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC250.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF4.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| END ITEM IDENTIFICATION | AN/ASG-21 |