NSN 5961-01-156-8147
Part Details | TRANSISTOR
5961-01-156-8147 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 13153395, 13153395, 5961-01-156-8147, 01-156-8147, 5961011568147, 011568147
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 25, 1983 | 01-156-8147 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-156-8147
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 13153395 | 1BS93 | ELECTRO DESIGN MANUFACTURING INC. |
| 13153395 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-156-8147
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX350.0 MAXIMUM AND ACK20.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AACCY8.00 AMPERES NOMINAL AND AACEH4.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG75.0 WATTS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.553 INCHES MINIMUM AND 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.762 INCHES NOMINAL |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 18876-13153395 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| END ITEM IDENTIFICATION | 1440-01-207-3002 |