NSN 5961-01-158-8438
Part Details | TRANSISTOR
5961-01-158-8438 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 4045636P1, 330308, CIC376, 1489841, 148984-1, 2N7105, RELEASE 7099, 18550215, 1855-0215, SD211833B, SD211/833B, SD211EE883B, SD211EE/883B, SD11EE883B, SD11EE/883B, CW474, 04EM096001, 04EM096-001, 8030761, 803076-1, 2N7105, SD211DE, DM1074, SDF9211, M1015883B, M1015/883B, SD211DEM, SD211DE/M, SD211DE(SELECTED), 5961-01-158-8438, 01-158-8438, 5961011588438, 011588438
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 30, 1983 | 01-158-8438 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-158-8438
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 4045636P1 | 94117 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 330308 | 16067 | CALIFORNIA INSTRUMENTS CORP |
| CIC376 | 16067 | CALIFORNIA INSTRUMENTS CORP |
| 148984-1 | 94987 | CUBIC DEFENSE APPLICATIONS, INC. |
| 2N7105 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 7099 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1855-0215 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| SD211/833B | 32293 | INTERSIL INCSUB OF GENERAL ELECTRIC CO |
| SD211EE/883B | 18324 | PHILIPS SEMICONDUCTORS INC |
| SD11EE/883B | 18324 | PHILIPS SEMICONDUCTORS INC |
| CW474 | 18324 | PHILIPS SEMICONDUCTORS INC |
| 04EM096-001 | 24587 | RAYTHEON COESD LONG ISLAND DIV |
| 803076-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N7105 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| SD211DE | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| DM1074 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| SDF9211 | 21845 | SOLITRON DEVICES, INC. |
| M1015/883B | 21845 | SOLITRON DEVICES, INC. |
| SD211DE/M | 15818 | TELCOM SEMICONDUCTOR INC |
| SD211DE(SELECTED) | 0ANF0 | TOPAZ SEMICONDUCTOR INCSUB OF HYTEK MICROSYSTEMS INC |
Technical Data | NSN 5961-01-158-8438
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX30.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF1.2 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM AND 0.560 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 4 PIN |
| OVERALL LENGTH | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.178 INCHES MINIMUM AND 0.195 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| TEST DATA DOCUMENT | 94987-148984 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |