NSN 5961-01-159-2478
Part Details | TRANSISTOR
5961-01-159-2478 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: MA42571, 72308950, 723089-50, 5961-01-159-2478, 01-159-2478, 5961011592478, 011592478
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 04, 1983 | 01-159-2478 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-159-2478
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MA42571 | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| 723089-50 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-159-2478
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BAC25.0 MINIMUM AND BAB30.0 MINIMUM AND B.5 MINIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC300.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF3.0 WATTS |
| TRANSFER RATIO | A5.0 NOMINAL |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 RIBBON |
| OVERALL LENGTH | 0.370 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.043 INCHES NOMINAL |
| OVERALL WIDTH | 0.215 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TEST DATA DOCUMENT | 05869-723089 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACES GOLD |