NSN 5961-01-159-2483
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-159-2483 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 50829570, 5082-9570, 6121012, DZ731205L, 7206573, 720657-3, 5961-01-159-2483, 01-159-2483, 5961011592483, 011592483
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 04, 1983 | 01-159-2483 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-159-2483
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 5082-9570 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 6121012 | 52088 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
| DZ731205L | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 720657-3 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-159-2483
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDB200.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAF100.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAD250.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.076 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |