NSN 5961-01-159-3166
Part Details | TRANSISTOR
5961-01-159-3166 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: QXTR2977, QXTR-2977, QXTR2977, QXTR-2977, 72308943, 723089-43, 5961-01-159-3166, 01-159-3166, 5961011593166, 011593166
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 06, 1983 | 01-159-3166 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-159-3166
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| QXTR-2977 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| QXTR-2977 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 723089-43 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-159-3166
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM25.0 MAXIMUM AND CA+16.0 MAXIMUM AND CBA1.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC35.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF300.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON AND 1 CASE |
| OVERALL LENGTH | 0.070 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.110 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |