NSN 5961-01-159-3339
Part Details | TRANSISTOR
5961-01-159-3339 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 80434, 72308423, 723084-23, 5961-01-159-3339, 01-159-3339, 5961011593339, 011593339
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 06, 1983 | 01-159-3339 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-159-3339
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 80434 | 32421 | MICROWAVE SEMICONDUCTOR CORP |
| 723084-23 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-159-3339
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM50.0 MAXIMUM AND CA+20.0 MAXIMUM AND CBA3.5 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC560.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF10.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 3 RIBBON |
| OVERALL LENGTH | 0.115 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.235 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | LEADS AND HEADER GOLD |