NSN 5961-01-163-0035
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-163-0035 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N1316, IN719, 5961PL1323697, 1N966B, USN1N966B, MILS19500117, MIL-S-19500/117, MILPRF19500117, MIL-PRF-19500/117, JAN1N966B1, JAN1N966B-1, JAN1N966B, JAN1N966, JANIN966B1, JANIN966B-1, 1N1316, 803687, 41015CR, 10104180, 10015625025, 10015625-025, 5961-01-163-0035, 01-163-0035, 5961011630035, 011630035
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 27, 1983 | 01-163-0035 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-163-0035
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N1316 | 94375 | AUTOMATIC CONNECTOR |
| IN719 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 5961PL1323697 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
| 1N966B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| USN1N966B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-S-19500/117 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/117 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N966B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N966B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N966 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANIN966B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 1N1316 | 99942 | N A P SMD TECHNOLOGY INC |
| 803687 | 07342 | NAI TECHNOLOGIES INC |
| 41015CR | 98230 | NATIONAL SECURITY AGENCY |
| 10104180 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
| 10015625-025 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-01-163-0035
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET16.0 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | BACAS7.80 MILLIAMPERES NOMINAL AND BACEA25.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.120 INCHES MINIMUM AND 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.055 INCHES MINIMUM AND 0.090 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | VOLTAGE REGULATOR |
| TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 117 GOVERNMENT SPECIFICATION |