NSN 5961-01-167-1545
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-167-1545 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N972B, CR12237, CR122-37, 1N5872B, RELEASE6447, 1N5872B, 1N758A1JTX, 1N758A-1JTX, 3860220000, 386-0220-000, JANTX1N972B, JANIN972B, 1N972B, 1N972, 1N972B, 1N972B, MILS19500117, MIL-S-19500/117, MILPRF19500117, MIL-PRF-19500/117, JAN1N972B1, JAN1N972B-1, JAN1N972, JANTX1N972B1, JANTX1N972B-1, IN972B, 917AS70042, 917AS700-42, 5042445, 5042-445, 418036135, 418036-135, 1N748A, 5961-01-167-1545, 01-167-1545, 5961011671545, 011671545
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 22, 1983 | 01-167-1545 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-167-1545
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N972B | 03864 | AAI/ACL TECHNOLOGIES INCIM AND C DIV |
| CR122-37 | 08748 | ELDEC CORPORATIONDBA CRANE AEROSPACE & ELECTRONICS |
| 1N5872B | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE6447 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N5872B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N758A-1JTX | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 386-0220-000 | 88113 | HBC SOLUTIONS, INC.DBA HARRIS BROADCAST |
| JANTX1N972B | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| JANIN972B | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| 1N972B | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| 1N972 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| 1N972B | 07688 | JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL |
| 1N972B | 13859 | KING NUTRONICS CORPORATION |
| MIL-S-19500/117 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MIL-PRF-19500/117 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N972B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JAN1N972 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| JANTX1N972B-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| IN972B | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 917AS700-42 | 30003 | NAVAL AIR SYSTEMS COMMAND MANAGEDORIGINAL DESIGN ACTIVITY NOT |
| 5042-445 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 418036-135 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 1N748A | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-01-167-1545
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET30.0 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | AS4.20 MILLIAMPERES NOMINAL AND BACEA13.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |