NSN 5961-01-168-6505
Part Details | TRANSISTOR
5961-01-168-6505 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 6010513003, 6010513-003, IRF120, JANTX2N6756, V10850, 1686817, 1686-817, 5961-01-168-6505, 01-168-6505, 5961011686505, 011686505
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 21, 1983 | 01-168-6505 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-168-6505
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 6010513-003 | 12436 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| IRF120 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
| JANTX2N6756 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| V10850 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 1686-817 | 31361 | WOODWARD, INC.DBA INDUSTRIAL PRODUCTS GROUP |
Technical Data | NSN 5961-01-168-6505
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAG100.0 MAXIMUM AND C.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACBR8.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG40.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL AND CERAMIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-204AA |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.563 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.350 INCHES NOMINAL |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |