NSN 5961-01-169-4682
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-169-4682 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5237B, 202012, 20201-2, 20201, 1N5237B, 5961-01-169-4682, 01-169-4682, 5961011694682, 011694682
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 09, 1984 | 01-169-4682 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-169-4682
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5237B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 20201-2 | 30377 | SMITHS AEROSPACE INC. ELECTRONICSYSTEMS-GRAND RAPIDS |
| 20201 | 30377 | SMITHS AEROSPACE INC. ELECTRONICSYSTEMS-GRAND RAPIDS |
| 1N5237B | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-01-169-4682
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AGD8.2 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | EB20.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZAAF500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.022 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| SPECIAL TEST FEATURES | TESTED PER BASE TEN SYSTEMS DWG 20201 |