NSN 5961-01-169-4687
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-169-4687 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5232B, 1N5232B, 20200, 1N5232B, 5961-01-169-4687, 01-169-4687, 5961011694687, 011694687
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 09, 1984 | 01-169-4687 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-169-4687
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5232B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N5232B | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| 20200 | 30377 | SMITHS AEROSPACE INC. ELECTRONICSYSTEMS-GRAND RAPIDS |
| 1N5232B | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-01-169-4687
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET5.6 NOMINAL |
| VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
| CURRENT RATING PER CHARACTERISTIC | AS20.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-204AH |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.250 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.160 INCHES NOMINAL |
| OVERALL DIAMETER | 0.075 INCHES NOMINAL |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL TEST FEATURES | TESTED PER BASE TEN SYSTEMS DWG 20200 |