NSN 5961-01-169-4695
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-169-4695 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5711, 1N5711, 1N5711, B80658, 560545, 23113, 5961-01-169-4695, 01-169-4695, 5961011694695, 011694695
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 09, 1984 | 01-169-4695 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-169-4695
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5711 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 1N5711 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1N5711 | K3464 | HEWLETT-PACKARD LTD |
| B80658 | K0967 | MBDA UK LIMITEDDBA MBDA UK LTD |
| 560545 | D0327 | SELEX ES GMBH |
| 23113 | 30377 | SMITHS AEROSPACE INC. ELECTRONICSYSTEMS-GRAND RAPIDS |
Technical Data | NSN 5961-01-169-4695
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | ACT70.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AF15.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF250.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.016 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.076 INCHES NOMINAL |
| SPECIAL TEST FEATURES | TESTED PER BASE TEN SYSTEMS DWG 23113 |