NSN 5961-01-169-6516
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-169-6516 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5250B, 1N5250A, 20212, 5961-01-169-6516, 01-169-6516, 5961011696516, 011696516
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 12, 1984 | 01-169-6516 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-169-6516
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5250B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N5250A | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 20212 | 30377 | SMITHS AEROSPACE INC. ELECTRONICSYSTEMS-GRAND RAPIDS |
Technical Data | NSN 5961-01-169-6516
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AET20.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AS6.20 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-204AH |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.250 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.160 INCHES NOMINAL |
| OVERALL DIAMETER | 0.075 INCHES NOMINAL |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL TEST FEATURES | TESTED PER BASE TEN SYSTEMS DWG 20212 |