NSN 5961-01-175-5160
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-175-5160 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 19020678, 1902-0678, SZ11213153, SZ11213-153, 19020678, 1902-0678, DZ730820G, 5961-01-175-5160, 01-175-5160, 5961011755160, 011755160
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 01, 1984 | 01-175-5160 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-175-5160
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1902-0678 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| SZ11213-153 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1902-0678 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| DZ730820G | 14552 | MICROSEMI CORPORATION |
Technical Data | NSN 5961-01-175-5160
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET11.0 MAXIMUM |
| VOLTAGE TOLERANCE IN PERCENT | M2.0/P2.0 |
| CURRENT RATING PER CHARACTERISTIC | BACAS23.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG1.0 WATTS |
| INCLOSURE MATERIAL | GLASS |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-15 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.140 INCHES MAXIMUM |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |