NSN 5961-01-177-1329
Part Details | TRANSISTOR
5961-01-177-1329 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 80830, 41450, 5961-01-177-1329, 01-177-1329, 5961011771329, 011771329
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 19, 1984 | 01-177-1329 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-177-1329
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 80830 | 32421 | MICROWAVE SEMICONDUCTOR CORP |
| 41450 | 21877 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV NAVAL AND MARINE SYSTEMS |
Technical Data | NSN 5961-01-177-1329
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | POINT CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | B.5 MINIMUM AND BAM45.0 MINIMUM AND BFG45.0 MINIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACBF5.00 MILLIAMPERES NOMINAL |
| TRANSFER RATIO | BAK15.0 MINIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 3 RIBBON |
| OVERALL LENGTH | 0.810 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.190 INCHES MAXIMUM |
| OVERALL WIDTH | 0.740 INCHES MINIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TEST DATA DOCUMENT | 21877-41450 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | EXTERNAL SURFACES GOLD |