NSN 5961-01-179-3468
Part Details | TRANSISTOR
5961-01-179-3468 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 267896, 267896, 267896, F1556, F1556, 5961-01-179-3468, 01-179-3468, 5961011793468, 011793468
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 17, 1984 | 01-179-3468 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-179-3468
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 267896 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 267896 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 267896 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| F1556 | 21845 | SOLITRON DEVICES, INC. |
| F1556 | 15818 | TELCOM SEMICONDUCTOR INC |
Technical Data | NSN 5961-01-179-3468
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAW50.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAK10.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF300.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.190 INCHES NOMINAL |
| OVERALL DIAMETER | 0.220 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | LEAD SURFACES GOLD |