NSN 5961-01-180-7235
Part Details | TRANSISTOR
5961-01-180-7235 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: IVN5200TND, 1VN5200TND, IVN5200TND, 889005001, 889-005-001, 889005001, 889-005-001, VN1204N2, 5961-01-180-7235, 01-180-7235, 5961011807235, 011807235
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 02, 1984 | 01-180-7235 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-180-7235
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| IVN5200TND | 09214 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 1VN5200TND | 32293 | INTERSIL INCSUB OF GENERAL ELECTRIC CO |
| IVN5200TND | 32293 | INTERSIL INCSUB OF GENERAL ELECTRIC CO |
| 889-005-001 | 59211 | PARKER-HANNIFIN CORPORATIONDBA CUSTOMER SUPPORT MILITARY |
| 889-005-001 | 26055 | PARKER-HANNIFIN CORPORATIONDBA ELECTRONICS SYSTEMS DIVISION |
| VN1204N2 | 59640 | SUPERTEX INC. |
Technical Data | NSN 5961-01-180-7235
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A0.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AD4.00 AMPERES NOMINAL AND DY10.00 AMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-39 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES MINIMUM |
| OVERALL DIAMETER | 0.360 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |