NSN 5961-01-181-3052
Part Details | TRANSISTOR
5961-01-181-3052 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 40251, 505257, 209285008, 209285-008, 5961-01-181-3052, 01-181-3052, 5961011813052, 011813052
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 08, 1984 | 01-181-3052 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-181-3052
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 40251 | 34371 | INTERSIL CORPORATIONDIV NA |
| 505257 | 89022 | TDK-LAMBDA AMERICAS INC.DIV HIGH POWER DIVISION |
| 209285-008 | 89022 | TDK-LAMBDA AMERICAS INC.DIV HIGH POWER DIVISION |
Technical Data | NSN 5961-01-181-3052
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM50.0 MAXIMUM AND CA+40.0 MAXIMUM AND CBA5.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACEE8.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF117.0 WATTS |
| TRANSFER RATIO | BAK15.0 MINIMUM AND CAK60.0 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNTHREADED HOLE AND 1 CASE |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 1.050 INCHES MAXIMUM |
| OVERALL WIDTH | 0.450 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |