NSN 5961-01-185-1101

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-185-1101 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 41103112, 411031-12, SENB151, SEN-B-151, SA6652, 5961-01-185-1101, 01-185-1101, 5961011851101, 011851101

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 25, 198401-185-110162108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 3 PHASE

Cross Reference | NSN 5961-01-185-1101
Part Number Cage Code Manufacturer
411031-1200752EDO LLCDIV ANTENNA PRODUCTS
SEN-B-15113409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
SA665214099SEMTECH CORPORATION
Technical Data | NSN 5961-01-185-1101
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC600.0 WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICA00.00 AMPERES AND ACE33.00 AMPERES AND ACG10.00 AMPERES
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY5 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 3 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH0.125 INCHES MAXIMUM
OVERALL WIDTH0.750 INCHES MAXIMUM
OVERALL HEIGHT0.600 INCHES MAXIMUM
SPECIAL FEATURESFOR USE AT FREQUENCIES OF 1 KHZ OR LESS
END ITEM IDENTIFICATIONB-1B AIRCRAFT