NSN 5961-01-185-9482
Part Details | TRANSISTOR
5961-01-185-9482 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 9113751, 911375-1, 806165, 80617, 5961-01-185-9482, 01-185-9482, 5961011859482, 011859482
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 05, 1984 | 01-185-9482 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-185-9482
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 911375-1 | 80249 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 806165 | 80249 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 80617 | 32421 | MICROWAVE SEMICONDUCTOR CORP |
Technical Data | NSN 5961-01-185-9482
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM45.0 MAXIMUM AND CAS45.0 MAXIMUM AND CBA3.5 MAXIMUM |
| POWER RATING PER CHARACTERISTIC | ATCAG30.0 WATTS |
| TRANSFER RATIO | CAK200.0 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 2 FLANGE AND 2 RIBBON |
| OVERALL LENGTH | 0.800 INCHES NOMINAL |
| OVERALL HEIGHT | 0.210 INCHES MAXIMUM |
| OVERALL WIDTH | 0.285 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| END ITEM IDENTIFICATION | RADAR SYSTEM AN/FPS-117 |
| PRECIOUS MATERIAL | GOLD |
| PRECIOUS MATERIAL AND LOCATION | EXTERNAL SURFACES GOLD |