NSN 5961-01-193-5325
Part Details | TRANSISTOR
5961-01-193-5325 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 723059001, 723-059-001, MGF1801, MGF-1801, 5961-01-193-5325, 01-193-5325, 5961011935325, 011935325
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 05, 1984 | 01-193-5325 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-193-5325
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 723-059-001 | 17903 | ANDREW SCICOMM INC |
| MGF-1801 | S0319 | MITSUBISHI ELECTRIC CORPORATION |
Technical Data | NSN 5961-01-193-5325
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GALLIUM ARSENIDE |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CEQ6.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD250.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF200.0 MILLIWATTS |
| INCLOSURE MATERIAL | CERAMIC AND METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 14.9 MILLIMETERS NOMINAL |
| OVERALL HEIGHT | 0.8 MILLIMETERS NOMINAL |
| OVERALL WIDTH | 14.9 MILLIMETERS NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |