NSN 5961-01-194-1305
Part Details | TRANSISTOR
5961-01-194-1305 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 69288521B, 6928852-1B, 5961-01-194-1305, 01-194-1305, 5961011941305, 011941305
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 10, 1984 | 01-194-1305 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-194-1305
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 6928852-1B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-194-1305
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAL80.0 MAXIMUM AND CAN80.0 MAXIMUM AND CAY5.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC5.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAB28.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-111 |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 4 TAB, SOLDER LUG |
| OVERALL LENGTH | 0.993 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.437 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |