NSN 5961-01-194-5751

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-194-5751 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 3130033G001, SA9625, 5961-01-194-5751, 01-194-5751, 5961011945751, 011945751

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 16, 198401-194-575162108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

CENTER TAP 3 PHASE

Cross Reference | NSN 5961-01-194-5751
Part Number Cage Code Manufacturer
3130033G00128527HARRIS CORPORATIONDBA ELECTRONIC SYSTEMS, INTEGRATED
SA962514099SEMTECH CORPORATION
Technical Data | NSN 5961-01-194-5751
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 PEAK INVERSE VOLTAGE AND 140.0 FORWARD VOLTAGE, TOTAL RMS
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTICACF9.00 AMPERES AND A.00 AMPERES AND UCL75.00 MICROAMPERES
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY5 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR CENTER TAP 3 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH1.300 INCHES MAXIMUM
OVERALL WIDTH0.475 INCHES MAXIMUM
OVERALL HEIGHT0.800 INCHES MAXIMUM