NSN 5961-01-196-4900
Part Details | TRANSISTOR
5961-01-196-4900 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: FN5179, U310, 5961PL1293413, 6532192, 653219-2, U310E3, U310-E3, U310, FN4605, 5961-01-196-4900, 01-196-4900, 5961011964900, 011964900
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 12, 1984 | 01-196-4900 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-196-4900
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| FN5179 | Z3522 | BAE SYSTEMS AUSTRALIA LTDDIV BAE SYSTEMS AUSTRALIA LIMITED |
| U310 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 5961PL1293413 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
| 653219-2 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| U310-E3 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| U310 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| FN4605 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-196-4900
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | C25.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAK20.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.150 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |