NSN 5961-01-197-2008
Part Details | TRANSISTOR
5961-01-197-2008 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N54342, 2N5434-2, 4405273402, 44-052734-02, FN4348, 5961-01-197-2008, 01-197-2008, 5961011972008, 011972008
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 19, 1984 | 01-197-2008 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-197-2008
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5434-2 | 66182 | INTERFET CORPORATION |
| 44-052734-02 | 15280 | NORTHROP GRUMMAN SYSTEMS CORPORATIONDIV ES DEFENSIVE SYSTEMS DIVISION |
| FN4348 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-01-197-2008
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAWM25.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAK100.00 MILLIAMPERES NOMINAL AND BACAD400.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF300.0 MILLIWATTS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.150 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |