NSN 5961-01-198-7031
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-198-7031 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: A2X2030, H980046001B, H980046-001B, H980046001B, H980046-001B, 5961-01-198-7031, 01-198-7031, 5961011987031, 011987031
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 11, 1985 | 01-198-7031 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-198-7031
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| A2X2030 | 21847 | FEI MICROWAVE INC |
| H980046-001B | 06341 | PRODUCTS/TECHNIQUES, INC.DBA P T I |
| H980046-001B | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-198-7031
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BCT30.0 MINIMUM AND CED20.0 MAXIMUM |
| POWER RATING PER CHARACTERISTIC | BZCAF125.0 MILLIWATTS |
| CAPACITANCE RATING IN PICOFARADS | 1.1 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.076 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |