NSN 5961-01-199-4274
Part Details | TRANSISTOR
5961-01-199-4274 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 471002900, 4710029-00, 4710029, NE05039112, NE050391-12, 5961-01-199-4274, 01-199-4274, 5961011994274, 011994274
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 22, 1985 | 01-199-4274 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-199-4274
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 4710029-00 | 34257 | EIP MICROWAVE INC |
| 4710029 | 34257 | EIP MICROWAVE INC |
| NE050391-12 | 34257 | EIP MICROWAVE INC |
Technical Data | NSN 5961-01-199-4274
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB38.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC750.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF10.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | PRESS FIT |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 14.000 INCHES MAXIMUM |
| OVERALL HEIGHT | 4.600 INCHES MAXIMUM |
| OVERALL WIDTH | 7.200 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |