NSN 5961-01-199-5607

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-199-5607 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 7845598P1, 7845598P001, 7845598P1, 6551119, 655-1119, 7845598P1, SENB201, SEN-B-201, SCNB201, SCN-B-201, 5961-01-199-5607, 01-199-5607, 5961011995607, 011995607

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 23, 198501-199-560762108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-01-199-5607
Part Number Cage Code Manufacturer
7845598P103538LOCKHEED MARTIN CORPORATIONDIV RMS
7845598P00103538LOCKHEED MARTIN CORPORATIONDIV RMS
7845598P112969MICRO USPD INC
655-111912969MICRO USPD INC
7845598P113409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
SEN-B-20113409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
SCN-B-20113409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
Technical Data | NSN 5961-01-199-5607
Characteristic Specifications
MATERIAL SILICON
TERMINAL TYPE AND QUANTITY5 TURRET
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-65.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH0.755 INCHES MAXIMUM
OVERALL WIDTH0.755 INCHES MAXIMUM
OVERALL HEIGHT0.250 INCHES MAXIMUM