NSN 5961-01-199-8948
Part Details | TRANSISTOR
5961-01-199-8948 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: VN67AA, 118903, 5961-01-199-8948, 01-199-8948, 5961011998948, 011998948
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 28, 1985 | 01-199-8948 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-199-8948
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| VN67AA | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 118903 | 52542 | SYSTRON-DONNER CORPMICROWAVE/INSTRUMENT DIV |
Technical Data | NSN 5961-01-199-8948
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX60.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AABAD1.50 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG8.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-220 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 1 |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.650 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.190 INCHES MAXIMUM |
| OVERALL WIDTH | 0.420 INCHES MAXIMUM |