NSN 5961-01-202-5101
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-202-5101 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N5230B, 1N5230B, 1N5230B, P00347350051, P00347350-051, 1N5230B, 1N5230B, 23496, 1N5230B, 5961-01-202-5101, 01-202-5101, 5961012025101, 012025101
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 03, 1985 | 01-202-5101 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-202-5101
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N5230B | 55464 | CENTRAL SEMICONDUCTOR CORP. |
| 1N5230B | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 1N5230B | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| P00347350-051 | 07421 | INTERSTATE ELECTRONICS CORPORATIONDBA L-3 INTERSTATE ELECTRONICS |
| 1N5230B | 12969 | MICRO USPD INC |
| 1N5230B | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 23496 | 30377 | SMITHS AEROSPACE INC. ELECTRONICSYSTEMS-GRAND RAPIDS |
| 1N5230B | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-01-202-5101
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | AGD4.7 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | CKCCH5.00 MICROAMPERES |
| POWER RATING PER CHARACTERISTIC | BZCAF500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.022 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |