NSN 5961-01-203-6749

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-01-203-6749 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 1A71927TX, 1A7192-7TX, 5012126, 5012-126, SENB258, SA8299, SA8299, 5961-01-203-6749, 01-203-6749, 5961012036749, 012036749

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 17, 198501-203-674962108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-203-6749
Part Number Cage Code Manufacturer
1A7192-7TX97953GE AVIATION SYSTEMS LLCDBA GE AVIATION
5012-12605869RAYTHEON COMPANYDBA RAYTHEON
SENB25813409RSM ELECTRON POWER, INC.DBA SENSITRON SEMICONDUCTOR
SA829914099SEMTECH CORPORATION
SA8299SH879SEMTECH CORPUS CHRISTI.A. DE C.V.REYNOSA FACILITY
Technical Data | NSN 5961-01-203-6749
Characteristic Specifications
SPECIAL FEATURESSILICON;200 VOLTS;150 AMPERE;METAL AND PLASTIC ENCASED;3 TURRET-TYPE TERMINALS;2.250 IN. LG;0.344 IN. W;1.000 IN. H