NSN 5961-01-209-0184
Part Details | TRANSISTOR
5961-01-209-0184 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 240716, JANTXV2N6284, 5961-01-209-0184, 01-209-0184, 5961012090184, 012090184
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 22, 1985 | 01-209-0184 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-209-0184
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 240716 | 09205 | LOCKHEED MARTIN CORPELECTRONICS AND MISSILES DIV |
| JANTXV2N6284 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-209-0184
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT-DARLINGTON CONNECTED |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM100.0 MAXIMUM AND CA+100.0 MAXIMUM AND CBA7.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC20.00 AMPERES NOMINAL AND AACAB0.50 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF175.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.328 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| SPECIAL FEATURES | FLANGE 0.070 IN. THICK MAX; JUNCTION PATTERN ARRANGEMENT: NPN |
| END ITEM IDENTIFICATION | SU-112/AAS-38P |