NSN 5961-01-210-1787
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-210-1787 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 19010463, 1901-0463, 1N4156, 1N4156, 19010463, 1901-0463, 1N4156, 1N4156, 7206492, 720649-2, 5961-01-210-1787, 01-210-1787, 5961012101787, 012101787
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 07, 1985 | 01-210-1787 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-210-1787
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1901-0463 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 1N4156 | 16352 | C O D I CORPDBA CODI SEMICONDUCTOR INC |
| 1N4156 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
| 1901-0463 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1N4156 | 15238 | ITT SEMICONDUCTORSA DIVISION OF INTERNATIONAL |
| 1N4156 | 12969 | MICRO USPD INC |
| 720649-2 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-210-1787
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CEC20.0 MAXIMUM |
| POWER RATING PER CHARACTERISTIC | BZCAF400.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.200 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.090 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |