NSN 5961-01-210-8892
Part Details | TRANSISTOR
5961-01-210-8892 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: VN35AKTX, VN35AK-TX, VA1127, 0337583, 033758-3, 5961-01-210-8892, 01-210-8892, 5961012108892, 012108892
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 19, 1985 | 01-210-8892 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-210-8892
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| VN35AK-TX | 32293 | INTERSIL INCSUB OF GENERAL ELECTRIC CO |
| VA1127 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 033758-3 | 89305 | SIMMONDS PRECISION PRODUCTS INC |
Technical Data | NSN 5961-01-210-8892
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX35.0 MAXIMUM AND CAW35.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAD1.20 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG6.25 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | DRAIN |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |