NSN 5961-01-212-5789
Part Details | TRANSISTOR
5961-01-212-5789 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: SJ978H52, 3521058052, 352-1058-052, STJ1035, 5961-01-212-5789, 01-212-5789, 5961012125789, 012125789
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 14, 1985 | 01-212-5789 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-212-5789
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SJ978H52 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 352-1058-052 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| STJ1035 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
Technical Data | NSN 5961-01-212-5789
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAL100.0 MAXIMUM AND CA+100.0 MAXIMUM AND CAY6.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC7.00 AMPERES NOMINAL AND AACAB1.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF40.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-66 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.252 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.348 INCHES MAXIMUM |
| OVERALL WIDTH | 0.700 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |