NSN 5961-01-212-8009
Part Details | TRANSISTOR
5961-01-212-8009 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: JAN2N5039, JAN2N5039, JAN2N5039, 2000714001, 20-00714-001, 5961-01-212-8009, 01-212-8009, 5961012128009, 012128009
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 18, 1985 | 01-212-8009 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-212-8009
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JAN2N5039 | 1MY79 | INTERSIL COMMUNICATIONS INC. |
| JAN2N5039 | 34371 | INTERSIL CORPORATIONDIV NA |
| JAN2N5039 | 12969 | MICRO USPD INC |
| 20-00714-001 | 00724 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-212-8009
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM120.0 MAXIMUM AND CFH120.0 MAXIMUM AND CFG95.0 MAXIMUM AND CFE75.0 MAXIMUM AND CBA7.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC20.00 AMPERES NOMINAL AND AACAB5.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF140.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| END ITEM IDENTIFICATION | SATELLITE COMMUNICATIONS SET,AN/WSC-3(V)9 |