NSN 5961-01-212-8010
Part Details | TRANSISTOR
5961-01-212-8010 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5397, 2000738001, 20-00738-001, 2N5397, 2N5397, 5961-01-212-8010, 01-212-8010, 5961012128010, 012128010
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 18, 1985 | 01-212-8010 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-212-8010
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5397 | 32293 | INTERSIL INCSUB OF GENERAL ELECTRIC CO |
| 20-00738-001 | 00724 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N5397 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| 2N5397 | D9816 | WIMA SPEZIALVERTRIEBELEKTRONISCHERBAUELEMENTE GMBH & |
Technical Data | NSN 5961-01-212-8010
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDTM25.0 MAXIMUM AND C25.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAK10.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF300.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| END ITEM IDENTIFICATION | SATELLITE COMMUNICATIONS SET,AN/WSC-3(V)9 |