NSN 5961-01-212-8012
Part Details | TRANSISTOR
5961-01-212-8012 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N4351, SFE624K, 2000744001, 20-00744-001, 2N4351, 5961-01-212-8012, 01-212-8012, 5961012128012, 012128012
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 18, 1985 | 01-212-8012 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-212-8012
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N4351 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| SFE624K | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 20-00744-001 | 00724 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N4351 | 31338 | SEMITRONICS CORP |
Technical Data | NSN 5961-01-212-8012
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX25.0 MAXIMUM AND CAW30.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD30.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG300.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | STATIC DISCHARGE |
| END ITEM IDENTIFICATION | SATELLITE COMMUNICATIONS SET,AN/WSC-3(V)9 |