NSN 5961-01-212-8013
Part Details | TRANSISTOR
5961-01-212-8013 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: JAN2N918, 2000983001, 20-00983-001, 5961-01-212-8013, 01-212-8013, 5961012128013, 012128013
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 18, 1985 | 01-212-8013 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-212-8013
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JAN2N918 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 20-00983-001 | 00724 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-212-8013
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB30.0 MAXIMUM AND CAC15.0 MAXIMUM AND CBA3.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF200.0 MILLIWATTS |
| TRANSFER RATIO | CAD20.0 MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| END ITEM IDENTIFICATION | SATELLITE COMMUNICATIONS SET,AN/WSC-3(V)9 |