NSN 5961-01-213-1963

Part Details | TRANSISTOR

5961-01-213-1963 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: FE16C, VHE1403, UES1403, BYW29150, BYW29-150, BYV32150, BYV32-150, BYV32150, BYV32-150, BYV32150, BYV32-150, RUR0815, RUR-0815, 140192787, 14019278-7, BYV32150, BYV32-150, BYV32150, BYV32-150, 5961-01-213-1963, 01-213-1963, 5961012131963, 012131963

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 24, 198501-213-196320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-213-1963
Part Number Cage Code Manufacturer
FE16C14936GENERAL SEMICONDUCTOR INC
VHE140362703MICRO QUALITY SEMICONDUCTOR INC SUBOF MICROSEMI CORP
UES140312969MICRO USPD INC
BYW29-15025403PHILIPS CIRCUIT ASSEMBLIES
BYV32-15025403PHILIPS CIRCUIT ASSEMBLIES
BYV32-150F6650PHILIPS COMPOSANTS SA DIVISIONSEMICONDUCTEURS
BYV32-150F0862PHILIPS FRANCE
RUR-081526720RCA CORPNEW PRODUCTS DIV
14019278-7F6151SAFRAN
BYV32-150U3158SEMELAB LIMITED
BYV32-150F4022VISHAY GENERAL SEMICONDUCTOR SAS
Technical Data | NSN 5961-01-213-1963
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCDC150.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICAACCC16.00 AMPERES NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN175.0 DEG CELSIUS
INCLOSURE MATERIAL PLASTIC
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-220AB
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY1
TERMINAL TYPE AND QUANTITY3 PIN
OVERALL LENGTH0.650 INCHES MAXIMUM
OVERALL HEIGHT0.190 INCHES MAXIMUM
OVERALL WIDTH0.420 INCHES MAXIMUM
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN